Samsung Offers Industry’s First 64-gigabit MLC NAND Flash, Using Toggle DDR 2.0 interface

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has started the industry's first production of a high-performance toggle DDR 2.0 multi-level-cell (MLC) memory chip. The new NAND flash chip features a 64 gigabit (Gb) density, made possible by using an advanced 20 nanometer (nm) class* process technology. The chip is designed to support the high-performance requirements of mobile devices such as smartphones, tablets and solid state drives (SSDs).


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